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Results 11-14 of 14 (Search time: 0.002 seconds).


Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs)

Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; Choi, KJ; Cho, Byung Jinresearcher; Lee, HD; Kirsch, P; Harris, HR; Tsai, W; Datta, S; Tseng, HH; Banerjee, SK; Jammy, R, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09


Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxide

Cho, Byung Jinresearcher; Xu, Z; Guan, H; Li, MF, JOURNAL OF APPLIED PHYSICS, v.86, no.11, pp.6590 - 6592, 1999-12


Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

Oh, Hoon Jung; Choi, Kyu Jin; Loh, Wei Yip; Htoo, Thwin; Chua, Soo Jin; Cho, Byung Jinresearcher, JOURNAL OF APPLIED PHYSICS, v.102, no.5, 2007-09


Mechanical Stability Analysis via Neutral Mechanical Plane for High-Performance Flexible Si Nanomembrane FDSOI Device

Kim, Seung-Yoon; Bong, Jae Hoon; Kim, Cheolgyu; Hwang, Wan Sik; Kim, Taek-Sooresearcher; Cho, Byung Jinresearcher, ADVANCED MATERIALS INTERFACES, v.4, no.21, 2017-11

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