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Results 71-80 of 103 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
71
Reliability of thin gate oxides irradiated under X-ray lithography conditions

Cho, Byung Jinresearcher; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04

72
A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Cho, Byung Jinresearcher; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, SOLID-STATE ELECTRONICS, v.44, no.7, pp.1289 - 1292, 2000-07

73
Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias

Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jinresearcher; Kim, SJ, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.3087 - 3089, 2000-09

74
Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs)

Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; Choi, KJ; Cho, Byung Jinresearcher; Lee, HD; Kirsch, P; Harris, HR; Tsai, W; Datta, S; Tseng, HH; Banerjee, SK; Jammy, R, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09

75
Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide

Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jinresearcher, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.2872 - 2876, 2000-09

76
Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12

77
MOS characteristics of substituted Al gate on high-kappa dielectric

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11

78
B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma process

Whang, Sung-Jin; Lee, Sungjoo; Chi, Dong-Zhi; Yang, Wei-Feng; Cho, Byung Jinresearcher; Liew, Yun-Fook; Kwong, Dim-Lee, NANOTECHNOLOGY, v.18, no.27, 2007-07

79
Negative bias temperature instability on plasma-nitrided silicon dioxide film

Ang, CH; Lek, CM; Tan, SS; Cho, Byung Jinresearcher; Chen, TP; Lin, WH; Zhen, JZ, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.3B, pp.314 - 316, 2002-03

80
Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09

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