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Results 31-40 of 103 (Search time: 0.003 seconds).

31

Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11

32

Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs

Lek, CM; Cho, Byung Jinresearcher; Ang, CH; Tan, SS; Loh, WY; Zhen, JZ; Lap, C, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.6, pp.25 - 28, 2002-06

33

Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon

Zeng, YP; Lu, YF; Shen, ZX; Sun, WX; Yu, T; Liu, L; Zeng, JN; Cho, Byung Jinresearcher; Poon, CH, NANOTECHNOLOGY, v.15, no.5, pp.658 - 662, 2004-05

34

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09

35

Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Yeo, CC; Joo, MS; Cho, Byung Jinresearcher; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09

36

P-type floating gate for retention and P/E window improvement of flash memory devices

Shen, Chen; Pu, Jing; Li, Ming-Fu; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1910 - 1917, 2007-08

37

Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric

Kim, SJ; Cho, Byung Jinresearcher; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08

38

Thermally stable fully silicided Hf-silicide metal-gate electrode

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06

39

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, Byung Jinresearcher; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05

40

Demonstration of high-performance PMOSFETs using Si-SixGe1-x-Si quantum wells with high-kappa/metal-gate stacks

Majhi, P; Kalra, P; Harris, R; Choi, KJ; Heh, D; Oh, J; Kelly, D; Choi, R; Cho, Byung Jinresearcher; Banerjee, S; Tsai, W; Tseng, H; Jammy, R, IEEE ELECTRON DEVICE LETTERS, v.29, no.1, pp.99 - 101, 2008-01

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