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Results 101-103 of 103 (Search time: 0.003 seconds).


Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Kim SJ; Cho, Byung Jinresearcher; Li MF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444, 2003-07


Multi-layer high-kappa interpoly dielectric for floating gate flash memory devices

Zhang, L; He, W; Chan, DSH; Cho, Byung Jinresearcher, SOLID-STATE ELECTRONICS, v.52, pp.564 - 570, 2008-04


Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

Loh, WY; Cho, Byung Jinresearcher; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04

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