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Results 11-20 of 103 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) Altmetrics
Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

Chen, XY; Lu, YF; Cho, Byung Jinresearcher; Zeng, YP; Zeng, JN; Wu, YH, APPLIED PHYSICS LETTERS, v.81, no.7, pp.1344 - 1346, 2002-08

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric

Yeo, CC; Cho, Byung Jinresearcher; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05

Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

A MONOS-type flash memory using a high-k HfAlO charge trapping layer

Tan, YN; Chim, WK; Cho, Byung Jinresearcher; Choi, WK, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.9, pp.198 - 200, 2004

Thermal instability of effective work function in metal/high-kappa stack and its material dependence

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11

A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics

Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02

Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO2/TaN gate stack

Gao, Fei; Lee, S. J.; Rui, Li; Cho, Byung Jinresearcher; Balakumar, S.; Tung, Chih-Hang; Chi, D. Z.; Kwong, D. L., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.7, pp.222 - 224, 2006-05

Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

Zang, H.; Lee, S. J.; Loh, W. Y.; Wang, J.; Yu, M. B.; Lo, G. Q.; Kwong, D. L.; Cho, Byung Jinresearcher, APPLIED PHYSICS LETTERS, v.92, no.5, 2008-02

Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application

Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jinresearcher; Lo, GQ; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11

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