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Results 1-10 of 103 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
Border-trap characterization in high-kappa strained-si MOSFETs

Maji, Debabrata; Duttagupta, S. P.; Rao, V. Rarngopal; Yeo, Chia Ching; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.28, no.8, pp.731 - 733, 2007-08

MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09

Optical properties of SiOx nanostructured films by pulsed-laser deposition at different substrate temperatures

Chen, XY; Lu, YF; Wu, YH; Cho, Byung Jinresearcher; Song, WD; Dai, DY, JOURNAL OF APPLIED PHYSICS, v.96, no.6, pp.3180 - 3186, 2004-09

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04

Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer

Tan, YN; Chim, WK; Cho, Byung Jinresearcher; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07

Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics

Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, Byung Jinresearcher; Li, MF; Kwong, DL, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.431 - 433, 2003-10

Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

Loh, WY; Cho, Byung Jinresearcher; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12

Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation

Poon, CH; Cho, Byung Jinresearcher; Lu, YF; Bhat, M; See, A, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.21, no.2, pp.706 - 709, 2003

Correlation between interface traps and gate oxide leakage current in the direct tunneling regime

Loh, WY; Cho, Byung Jinresearcher; Li, MF, APPLIED PHYSICS LETTERS, v.81, no.2, pp.379 - 381, 2002-07

A high performance MIM capacitor using HfO(2) dielectrics

Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jinresearcher; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09

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