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Results 11-16 of 16 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) Altmetrics
11
Article
Reliability of thin gate oxides irradiated under X-ray lithography conditions

Cho, Byung Jinresearcher; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04

12
Article
A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Cho, Byung Jinresearcher; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, SOLID-STATE ELECTRONICS, v.44, no.7, pp.1289 - 1292, 2000-07

13
Article
Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09

14
Article
Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

Chong, PF; Cho, Byung Jinresearcher; Chor, EF; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2181 - 2185, 2000-04

15
Article
Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si

Yu, HY; Li, MF; Cho, Byung Jinresearcher; Yeo, CC; Joo, MS; Kwong, DL; Pan, JS; Ang, CH; Zheng, JZ; Ramanathan, S, APPLIED PHYSICS LETTERS, v.81, no.2, pp.376 - 378, 2002-07

16
Article
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; Balasubramanian, N; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

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