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Results 21-25 of 25 (Search time: 0.003 seconds).

21

Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si

Yu, HY; Li, MF; Cho, Byung Jinresearcher; Yeo, CC; Joo, MS; Kwong, DL; Pan, JS; Ang, CH; Zheng, JZ; Ramanathan, S, APPLIED PHYSICS LETTERS, v.81, no.2, pp.376 - 378, 2002-07

22

Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03

23

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; Balasubramanian, N; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

24

High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jinresearcher; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12

25

Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

Loh, WY; Cho, Byung Jinresearcher; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04

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