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Results 11-20 of 25 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
11
Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric

Kim, SJ; Cho, Byung Jinresearcher; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08

12
Thermally stable fully silicided Hf-silicide metal-gate electrode

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06

13
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, Byung Jinresearcher; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05

14
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

Kim, SJ; Cho, Byung Jinresearcher; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09

15
Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack

Joo, MS; Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343, 2006-05

16
MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics

Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB; Liu, XY; Winkler, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02

17
Improvement of electrical properties of MOCVD HfO2 by multistep deposition

Yeo, CC; Cho, Byung Jinresearcher; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; Balasubramanian, N, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11

18
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06

19
Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, THIN SOLID FILMS, v.462, pp.15 - 18, 2004-09

20
MOS characteristics of substituted Al gate on high-kappa dielectric

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11

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