Crystal growth of high silica ZSM-5 at low temperature synthesis conditions

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At the temperature of 90 degrees C and under atmospheric pressure, growth kinetics of high silica ZSM-5 was investigated through a long induction, nucleation and crystal growth periods. It was found the entire crystallization mechanism of ZSM-5 seems to be the combined process of the nucleation via solid-solid transformation, intergrowth among seed crystals and the normal growth in the reaction mixture. Nuclei were initially formed on the Si-rich surface of the amorphous intermediates, indicating that the reaction of TPA with Si species was prior to that with Al species. As the reaction time proceeded, various types of intergrowth among the seed crystals were observed along with the crystals growing independently. The intergrowth seems to play a role for forming typical ZSM-5 crystal shapes. And then ZSM-5 crystals further grew in the reaction mixture, so that the bulk Si/Al-2 ratio of crystals approached that of the initial reaction mixture.
Publisher
KOREAN INST CHEM ENGINEERS
Issue Date
1996-03
Language
English
Article Type
Article
Keywords

CRYSTALLIZATION; ZEOLITE

Citation

KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.13, no.2, pp.144 - 149

ISSN
0256-1115
DOI
10.1007/BF02705901
URI
http://hdl.handle.net/10203/4452
Appears in Collection
CBE-Journal Papers(저널논문)
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