DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Hyun-Min | ko |
dc.contributor.author | Jeon, Kye-Ik | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.date.accessioned | 2008-04-21T10:28:41Z | - |
dc.date.available | 2008-04-21T10:28:41Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-03 | - |
dc.identifier.citation | MICROWAVE JOURNAL, v.44, no.3, pp.128 - 128 | - |
dc.identifier.issn | 0192-6225 | - |
dc.identifier.uri | http://hdl.handle.net/10203/4048 | - |
dc.description.abstract | An extraction procedure for thermal parameters of high power heterojunction bipolar transistors (HBT) with pulsed I-V measurements is presented. The pulsed measurements become essential to model thermal effect and frequency dispersion of high frequency devices. The measurement setup used here can be configured with commercially available components. | - |
dc.description.sponsorship | The material for this article was first presented at the European Microwave Conference held in Paris, October 2000. * | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | HORIZON HOUSE PUBLICATIONS INC | - |
dc.subject | RESISTANCE | - |
dc.title | Thermal modeling of heterojunction bipolar transistors with pulsed I-V measurements | - |
dc.type | Article | - |
dc.identifier.wosid | 000167727300027 | - |
dc.identifier.scopusid | 2-s2.0-0035271761 | - |
dc.type.rims | ART | - |
dc.citation.volume | 44 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 128 | - |
dc.citation.endingpage | 128 | - |
dc.citation.publicationname | MICROWAVE JOURNAL | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Park, Hyun-Min | - |
dc.contributor.nonIdAuthor | Jeon, Kye-Ik | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | RESISTANCE | - |
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