Thermal modeling of heterojunction bipolar transistors with pulsed I-V measurements

Cited 1 time in webofscience Cited 0 time in scopus
  • Hit : 788
  • Download : 545
An extraction procedure for thermal parameters of high power heterojunction bipolar transistors (HBT) with pulsed I-V measurements is presented. The pulsed measurements become essential to model thermal effect and frequency dispersion of high frequency devices. The measurement setup used here can be configured with commercially available components.
Publisher
HORIZON HOUSE PUBLICATIONS INC
Issue Date
2001-03
Language
ENG
Article Type
Article; Proceedings Paper
Keywords

RESISTANCE

Citation

MICROWAVE JOURNAL, v.44, no.3, pp.128 - 128

ISSN
0192-6225
URI
http://hdl.handle.net/10203/4048
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
2001hmpark_j.pdf(637.76 kB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 1 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0