Thermal modeling of heterojunction bipolar transistors with pulsed I-V measurements

An extraction procedure for thermal parameters of high power heterojunction bipolar transistors (HBT) with pulsed I-V measurements is presented. The pulsed measurements become essential to model thermal effect and frequency dispersion of high frequency devices. The measurement setup used here can be configured with commercially available components.
Publisher
HORIZON HOUSE PUBLICATIONS INC
Issue Date
2001-03
Language
ENG
Keywords

RESISTANCE

Citation

MICROWAVE JOURNAL, v.44, no.3, pp.128 - 128

ISSN
0192-6225
URI
http://hdl.handle.net/10203/4048
Appears in Collection
EE-Journal Papers(저널논문)
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