DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kwon, Young-Se | - |
dc.contributor.advisor | 권영세 | - |
dc.contributor.author | Jung, Woong | - |
dc.contributor.author | 정웅 | - |
dc.date.accessioned | 2011-12-14T02:23:16Z | - |
dc.date.available | 2011-12-14T02:23:16Z | - |
dc.date.issued | 1985 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64682&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/39741 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ vi, 69 p. ] | - |
dc.description.abstract | Oxide stripe GaAs double heterostructure(DH) laser diodes were fabricated on semi-insulating(SI) GaAs substrate for optoelectronic integrated circuit(OEIC) applications in mind. $n^-$ -GaAs/n-GaAs/$n^+$ -GaAs/n-AlGaAs/p-GaAs/p-AlGaAs/$p^+$ -GaAs layers were grown on the SI substrate by liquid phase epitaxy technique. Active layer thickness is 0.6 um. The n-type ohmic contact was formed on the $n^+$ -GaAs layer after chemical etching of the upper four layers. Threshold current of 210 mA was obtained for the stripe width of 8 um and the cavity length of 340 um. This value corresponds to the threshold current density of 2700 A/㎠ of the broad-area-type laser, which is close to the theoretical value. To further lower the threshold current, the active layer thickness must be decreased to 0.2 um. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.title | Fabrication of planar GaAs DH laser diodes on SI substrate | - |
dc.title.alternative | SI 기판 상의 평면형 GaAs 이형 접합 Laser diode 의 제작 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 64682/325007 | - |
dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
dc.identifier.uid | 000831374 | - |
dc.contributor.localauthor | Kwon, Young-Se | - |
dc.contributor.localauthor | 권영세 | - |
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