Fabrication of planar GaAs DH laser diodes on SI substrateSI 기판 상의 평면형 GaAs 이형 접합 Laser diode 의 제작

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dc.contributor.advisorKwon, Young-Se-
dc.contributor.advisor권영세-
dc.contributor.authorJung, Woong-
dc.contributor.author정웅-
dc.date.accessioned2011-12-14T02:23:16Z-
dc.date.available2011-12-14T02:23:16Z-
dc.date.issued1985-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64682&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/39741-
dc.description학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ vi, 69 p. ]-
dc.description.abstractOxide stripe GaAs double heterostructure(DH) laser diodes were fabricated on semi-insulating(SI) GaAs substrate for optoelectronic integrated circuit(OEIC) applications in mind. $n^-$ -GaAs/n-GaAs/$n^+$ -GaAs/n-AlGaAs/p-GaAs/p-AlGaAs/$p^+$ -GaAs layers were grown on the SI substrate by liquid phase epitaxy technique. Active layer thickness is 0.6 um. The n-type ohmic contact was formed on the $n^+$ -GaAs layer after chemical etching of the upper four layers. Threshold current of 210 mA was obtained for the stripe width of 8 um and the cavity length of 340 um. This value corresponds to the threshold current density of 2700 A/㎠ of the broad-area-type laser, which is close to the theoretical value. To further lower the threshold current, the active layer thickness must be decreased to 0.2 um.eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.titleFabrication of planar GaAs DH laser diodes on SI substrate-
dc.title.alternativeSI 기판 상의 평면형 GaAs 이형 접합 Laser diode 의 제작-
dc.typeThesis(Master)-
dc.identifier.CNRN64682/325007-
dc.description.department한국과학기술원 : 전기 및 전자공학과, -
dc.identifier.uid000831374-
dc.contributor.localauthorKwon, Young-Se-
dc.contributor.localauthor권영세-
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EE-Theses_Master(석사논문)
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