Fabrication of planar GaAs DH laser diodes on SI substrate = SI 기판 상의 평면형 GaAs 이형 접합 Laser diode 의 제작

Oxide stripe GaAs double heterostructure(DH) laser diodes were fabricated on semi-insulating(SI) GaAs substrate for optoelectronic integrated circuit(OEIC) applications in mind. $n^-$ -GaAs/n-GaAs/$n^+$ -GaAs/n-AlGaAs/p-GaAs/p-AlGaAs/$p^+$ -GaAs layers were grown on the SI substrate by liquid phase epitaxy technique. Active layer thickness is 0.6 um. The n-type ohmic contact was formed on the $n^+$ -GaAs layer after chemical etching of the upper four layers. Threshold current of 210 mA was obtained for the stripe width of 8 um and the cavity length of 340 um. This value corresponds to the threshold current density of 2700 A/㎠ of the broad-area-type laser, which is close to the theoretical value. To further lower the threshold current, the active layer thickness must be decreased to 0.2 um.
Advisors
Kwon, Young-Seresearcher권영세researcher
Publisher
한국과학기술원
Issue Date
1985
Identifier
64682/325007 / 000831374
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ vi, 69 p. ]

URI
http://hdl.handle.net/10203/39741
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64682&flag=t
Appears in Collection
EE-Theses_Master(석사논문)
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