AlGaAs-GaAs buried heterostructure laser = AlGaAs-GaAs buried heterostructure 레이저

Buried-Heterostructure laser diode is described, theoretically analyzed, and experimentally fabricated. The waveguiding properties and laser threshold conditions are analyzed using the effective refractive index approximation. Near equilibrium LPE growth method, which is useful in growing extremely thin layer, and Zn diffusion technique for enhancing the property of the ohmic contact are described in detail. Typical BH laser, $350 \times 10 \times 0.2 \mu{m}^3$, has 1.2V of cutin voltage and 150 mA of threshold current. With fine lithography equipment and by applying current-confining geometry to this laser, the threshold current can be more reduced.
Advisors
Kwon, Young-Seresearcher권영세researcher
Publisher
한국과학기술원
Issue Date
1985
Identifier
64664/325007 / 000831246
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ [i], 76 p. ]

URI
http://hdl.handle.net/10203/39723
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64664&flag=t
Appears in Collection
EE-Theses_Master(석사논문)
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