Internal gettering and its effects on device performances = 인터널 게터링이 소자의 동작특성에 미치는 영향

The formation of a denuded zone which is a defect-free region denuded of crystal defects and metallic impurities is studied. Experimentally observed results are compared with the results calculated by a simulation program. In calculating the depth of the denuded zone, a new criterion of P=1/2 $P_{\mbox{bulk}}$ is proposed, which renders the experimental and simulation results agree with each other. The effects of internal gettering on device performances are also investigated in terms of the gate oxide rupture voltage, p-n diode reverse leakage current, etc. It has been proven that internal gettering improves device performances considerably.
Advisors
Kim, Choong-KiresearcherKyung, Chong-Minresearcher김충기researcher경종민researcher
Publisher
한국과학기술원
Issue Date
1985
Identifier
64663/325007 / 000831250
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ [iii], 77 p. ]

URI
http://hdl.handle.net/10203/39722
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64663&flag=t
Appears in Collection
EE-Theses_Master(석사논문)
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