Characterization of impurity profile in silicon = 실리콘에서 불순물 분포의 산출

A program (PRECISE) was written to calculate the two-dimensional impurity profile in silicon owing to the fabrication processes such as diffusion and ion-implantation, which facilitates the rapid prediction of the 2-D impurity profile near the mask edge or the bird``s beak during the local oxidation process. In addition, the one dimensional simulator DIFSIM was modified to include the model for ion implantation, emitter dip effect and the arsenic diffusion, which agrees fairly well with the experimental data.
Advisors
Kyung, Chong-Minresearcher경종민researcher
Publisher
한국과학기술원
Issue Date
1985
Identifier
64660/325007 / 000831224
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ [ii], 61 p. ]

URI
http://hdl.handle.net/10203/39719
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64660&flag=t
Appears in Collection
EE-Theses_Master(석사논문)
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