Characterization of impurity profile in silicon

Abstract

A program (PRECISE) was written to calculate the two-dimensional impurity profile in silicon owing to the fabrication processes such as diffusion and ion-implantation, which facilitates the rapid prediction of the 2-D impurity profile near the mask edge or the bird``s beak during the local oxidation process. In addition, the one dimensional simulator DIFSIM was modified to include the model for ion implantation, emitter dip effect and the arsenic diffusion, which agrees fairly well with the experimental data.