DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kwon, Young-Se | - |
dc.contributor.advisor | 권영세 | - |
dc.contributor.author | Yoo, Tae-Kyung | - |
dc.contributor.author | 유태경 | - |
dc.date.accessioned | 2011-12-14T02:22:55Z | - |
dc.date.available | 2011-12-14T02:22:55Z | - |
dc.date.issued | 1985 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64659&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/39718 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ [iii], 88 p. ] | - |
dc.description.abstract | 1.3um GaInAsP/InP DH stripe-geometry laser diodes are fabricated by L.P.E. (Liquid Phase Epitaxy) technique. L.P.E. system was newly constructed for the growth of quaternary epitaxial layers. The lattice-matched GaInAsP epitaxial layer was successfully grown on an InP substrate. The misfit of hetero-epitaxial layers, Δa/a, was less than 0.05%. The surface of grown layers was flat and featureless. Four layers including GaInAsP (λ=1.3um) layer were grown for the fabrication of laser diodes. The thickness of active layer was 0.9um. The width of stripes was 10-30um. Under the pulsed operation, threshold current, Ith, and the normalized threshold current density, $J_{th}/d$, were 700mA and 7KA/㎠/um, respectively. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.title | Fabrication of 1.3 μm GaInAsP /InP DH stripe-geometry laser diodes | - |
dc.title.alternative | 1.3 um 파장 GaInAsP/InP stripe 구조 laser diode 의 제작 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 64659/325007 | - |
dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
dc.identifier.uid | 000831245 | - |
dc.contributor.localauthor | Kwon, Young-Se | - |
dc.contributor.localauthor | 권영세 | - |
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