Fabrication of 1.3 μm GaInAsP /InP DH stripe-geometry laser diodes = 1.3 um 파장 GaInAsP/InP stripe 구조 laser diode 의 제작

1.3um GaInAsP/InP DH stripe-geometry laser diodes are fabricated by L.P.E. (Liquid Phase Epitaxy) technique. L.P.E. system was newly constructed for the growth of quaternary epitaxial layers. The lattice-matched GaInAsP epitaxial layer was successfully grown on an InP substrate. The misfit of hetero-epitaxial layers, Δa/a, was less than 0.05%. The surface of grown layers was flat and featureless. Four layers including GaInAsP (λ=1.3um) layer were grown for the fabrication of laser diodes. The thickness of active layer was 0.9um. The width of stripes was 10-30um. Under the pulsed operation, threshold current, Ith, and the normalized threshold current density, $J_{th}/d$, were 700mA and 7KA/㎠/um, respectively.
Advisors
Kwon, Young-Seresearcher권영세researcher
Publisher
한국과학기술원
Issue Date
1985
Identifier
64659/325007 / 000831245
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ [iii], 88 p. ]

URI
http://hdl.handle.net/10203/39718
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64659&flag=t
Appears in Collection
EE-Theses_Master(석사논문)
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