Analytical MOSFET modeling for circuit simulation = 회로 시뮬레이션을 위한 해석적 MOSFET 모델링

Electrical characteristics of small size ion-implanted MOSFET``s are characterized based on analytical model that includes short channel, narrow width, and velocity saturation effects. Theoretical results on threshold voltage shift in short channel or narrow width devices are in good agreement with the experimental results. A comparison of the electrical characteristics of MOSFET``s with and without ion-implantation leads to the conclusion that the field implant dose significantly affects the threshold voltage behaviour in narrow width devices. Also considered is the external resistance that is important for the characteristics of short channel devices. Under these considerations, the Level 2 Model in SPICE 2.G is extended to the ion-implanted MOSFET``s in Part I and simple, but accurate MOSFET model in Part II.
Advisors
Kyung, Chong-Minresearcher경종민researcher
Publisher
한국과학기술원
Issue Date
1985
Identifier
64645/325007 / 000831119
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ vi, 72 p. ]

URI
http://hdl.handle.net/10203/39704
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64645&flag=t
Appears in Collection
EE-Theses_Master(석사논문)
Files in This Item
There are no files associated with this item.
  • Hit : 165
  • Download : 0
  • Cited 0 times in thomson ci

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0