Characterization of one-dimensional impurity profile in silicon using iterative parabolic solver = 수치해석 프로그램을 이용한 실리콘에서의 일차원적 불순물 분포의 산출

A computer program (DIFSIM : DIFfusion SIMulator) was written to calculate the impurity profile, specifically boron and phosphorus, due to three different diffusion processes-predeposition, drive-in in inert ambient, and drive-in in oxidizing ambient. The vacancy mechanism including Fair and Tsai``s theory for phosphorus diffusion was widely incorporated for modelling various diffusion processes. The concentration-dependent oxidation rate was also explained using the vacancy model, while the oxidation-enhanced diffusion was modelled using Watkins replacement mechanism. The simulation results using DIFSIM show a fairly good agreement with the experimental data, by adjusting some of the empirical parameters in the program. The results obtained using DIFSIM was also compared with SUPREM II, version 0-05, the mostly being-used process simulator.
Advisors
Kyung, Chong-Minresearcher경종민researcher
Publisher
한국과학기술원
Issue Date
1984
Identifier
64158/325007 / 000821183
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1984.2, [ ii, 88 p. ; ]

URI
http://hdl.handle.net/10203/39664
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64158&flag=t
Appears in Collection
EE-Theses_Master(석사논문)
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