characterization of diffision processes with spin-on sources
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Kim, Choong-Ki | - |
| dc.contributor.advisor | 김충기 | - |
| dc.contributor.author | Chung, Tae-Won | - |
| dc.contributor.author | 정태원 | - |
| dc.date.accessioned | 2011-12-14T02:19:16Z | - |
| dc.date.available | 2011-12-14T02:19:16Z | - |
| dc.date.issued | 1978 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=62309&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/39473 | - |
| dc.description | 학위논문 (석사) - 한국과학기술원 : 전기 및 전자공학과, 1978.2, [ [ii], 48, [9] p. ] | - |
| dc.description.abstract | Boron, phosphorus and arsenic spin-on sources are characterized in terms of diffusion coefficients. The results have been compared with the published values. Effects of the thickness of the doped oxide and the barrier oxide have been investigated. Finally, uniformity of junction depth and sheet resistance within one wafer has been investigated. | eng |
| dc.language | eng | - |
| dc.publisher | 한국과학기술원 | - |
| dc.title | characterization of diffision processes with spin-on sources | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 62309/325007 | - |
| dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
| dc.identifier.uid | 000761120 | - |
| dc.contributor.localauthor | Kim, Choong-Ki | - |
| dc.contributor.localauthor | 김충기 | - |
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