characterization of diffision processes with spin-on sources

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Boron, phosphorus and arsenic spin-on sources are characterized in terms of diffusion coefficients. The results have been compared with the published values. Effects of the thickness of the doped oxide and the barrier oxide have been investigated. Finally, uniformity of junction depth and sheet resistance within one wafer has been investigated.
Advisors
Kim, Choong-Ki김충기
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
1978
Identifier
62309/325007 / 000761120
Language
eng
Description

학위논문 (석사) - 한국과학기술원 : 전기 및 전자공학과, 1978.2, [ [ii], 48, [9] p. ]

URI
http://hdl.handle.net/10203/39473
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=62309&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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