characterization of diffision processes with spin-on sources
Boron, phosphorus and arsenic spin-on sources are characterized in terms of diffusion coefficients. The results have been compared with the published values. Effects of the thickness of the doped oxide and the barrier oxide have been investigated. Finally, uniformity of junction depth and sheet resistance within one wafer has been investigated.
- Advisors
- Kim, Choong-Ki; 김충기
- Description
- 한국과학기술원 : 전기 및 전자공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1978
- Identifier
- 62309/325007 / 000761120
- Language
- eng
- Description
학위논문 (석사) - 한국과학기술원 : 전기 및 전자공학과, 1978.2, [ [ii], 48, [9] p. ]
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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