A new low-resistance antifuse with planar metal/dielectric/poly-Si/dielectric/metal structure

A new antifuse with metal/dielectric/poly-Si/dielectric/metal structure has been developed for use in FPGAs as a voltage programmable Link. This structure has two thermally grown dielectrics with an 8.5 nm thickness and a boron-doped poly-Si pad. Low programmed on-state resistance of similar to 20 Omega was achieved by the formation of Al-Si metal alloy link in the doped poly-Si pad. The metal link was formed by the diffusion of Al from the positive electrode into poly-Si. The dielectric property of this antifuse might be reliable because of no hillocks on the bottom electrode and no interaction between the thermally grown SiO2 and the bottom electrode.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1997-03
Language
ENG
Keywords

METAL STRUCTURE

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.3B, pp.1642 - 1645

ISSN
0021-4922
URI
http://hdl.handle.net/10203/3941
Appears in Collection
EE-Journal Papers(저널논문)
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