DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Sung-Hoon | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2008-04-17T06:11:30Z | - |
dc.date.available | 2008-04-17T06:11:30Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-05 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v.40, no.5A, pp.3147 - 3152 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3940 | - |
dc.description.abstract | We have studied metalorganic chemical vapor deposition of TiO2 thin films using titanium tetra-isopropoxide [TTIP, Ti(O-C3H7)(4)] and NH3 as a catalyst at deposition temperatures ranging from 250 to 365 degreesC. At deposition temperatures above 330 degreesC, pyrolytic self-decomposition of TTIP is dominant regardless of the use of NH3, and the activation energy for TiO2 film formation is 152 kJ/mol. At deposition temperatures below 330 degreesC, the films can be formed with the help of the catalytic activity of NH3, and the activation energy is reduced to 55 kJ/mol. TiO2 films deposited through the pyrolytic self-decomposition of TTIP have an anatase structure before and after performing post-deposition annealing in oxygen ambient for 30 min at 750 degreesC. On the other hand, the as-deposited films formed through the catalytic reaction of TTIP with NH3 incorporate nitrogen impurities and have microcrystallites of the rutile structure within the amorphous matrix. However, the post-deposition annealing, the nitrogen impurities are completely removed from the films, and the films are converted into polycrystalline TiO2 films with the rutile structure, which have a high dielectric constant of 82 and a low leakage current. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.title | Formation of TiO2 thin films using NH3 as catalyst by metalorganic chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000170772000019 | - |
dc.identifier.scopusid | 2-s2.0-0035328792 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 5A | - |
dc.citation.beginningpage | 3147 | - |
dc.citation.endingpage | 3152 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 | - |
dc.identifier.doi | 10.1143/JJAP.40.3147 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Jung, Sung-Hoon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | TiO2 | - |
dc.subject.keywordAuthor | CVD | - |
dc.subject.keywordAuthor | TTIP | - |
dc.subject.keywordAuthor | NH3 | - |
dc.subject.keywordAuthor | catalyst | - |
dc.subject.keywordAuthor | rutile | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | TITANIUM-DIOXIDE | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | CVD | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | AMBIENTS | - |
dc.subject.keywordPlus | SILICON | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.