Significance of gate oxide thinning below 1.5 nm on 1/f noise behavior in n-channel metal-oxide-semiconductor field-effect transistors under electrical stress

The purpose of this study is to investigate the effects of electrical stress on the 1/f noise behavior in n-channel metal-oxide-semiconductor transistors with ultrathin gate oxides. Even under a weak electrical stress, the drain current noise (S-id) of the device with a 1.4-nm-thick oxide was found to increase abruptly beyond a certain critical gate bias. This deteriorated noise property was proven to be from simultaneous increases in gate current noise (S-ig) and the correlation between Sid and S-ig which were directly related to oxide trap generation and gate/drain current (I-g/(d)) ratio, respectively. Meanwhile, the increase in Sid in the device with a 2.3-nm-thick oxide after stress, with a comparable transconductance degradation, was relatively insignificant because of the device's smaller I-g/I-d ratio, even if the measured S-ig was comparable to that of the thinner oxide device. Consequently, the 1/f noise degradation could be much more significant than the accompanying DC characteristic degradations in the thin gate oxide below 1.5 nm.
Publisher
INST PURE APPLIED PHYSICS
Issue Date
2006-06
Language
ENG
Keywords

LOW-FREQUENCIES; FLICKER NOISE; MOSFETS; SILICON; RELIABILITY; PERFORMANCE; LAYERS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4943 - 4947

ISSN
0021-4922
DOI
10.1143/JJAP.45.4943
URI
http://hdl.handle.net/10203/3923
Appears in Collection
EE-Journal Papers(저널논문)
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