Enhancement of the film growth rate by promoting iodine adsorption in the catalyst-enhanced chemical vapor deposition of Cu

The effect of H, plasma pretreatment on the growth rate of films in the catalyst-enhanced chemical vapor deposition of Cu is presented. Cu(I) hexafluoroacetylacetonate-vinyltrimethylsilane [Cu(I)(hfac)(vtms)] and ethyl iodide (C2H5I) were used as a Cu precursor and a chemical source of iodine, respectively. Before adsorbing iodine onto the sputtered Cu seed layer, a pretreatment with H-2 plasma promoted the adsorption of iodine. In addition, the Cu film growth rate was almost linearly enhanced with the surface concentration of the iodine adatom. The increment of the surface concentration of the iodine adatom was confirmed by secondary ion mass spectroscopy analysis. The iodine adatoms were not buried during the Cu deposition, but most of them continuously floated out to the film surface. Thus, the iodine on the surface of the Cu seed layer retained its catalytic effect until the film deposition finished. As a result, the H-2 plasma pretreatment performed on the Cu seed layer prior to adsorbing iodine enhances the Cu film growth rate and improves the film qualities, such as electrical resistivity and surface smoothness, by promoting iodine adsorption. (C) 2002 American Vacuum Society.
Publisher
A V S AMER INST PHYSICS
Issue Date
2002
Language
ENG
Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A, v.20, no.2, pp.408 - 412

ISSN
0734-2101
DOI
10.1116/1.1448507
URI
http://hdl.handle.net/10203/3858
Appears in Collection
MS-Journal Papers(저널논문)
  • Hit : 469
  • Download : 1
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 7 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0