Fabrication of inner-striped ridge overgrown GaAs/AlGaAs double-heterostructure LASER diode = 내부 전류 제한구조를 가진 ridge형 GaAs/AlGaAs 이중 이형접합 레이저 다이오드의 제작

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The main objective of this work is to develop a low threshold current LASER Diode by employing an inner-striped current blocking layer. An emphasis is also on the SLPE(Selective Liquid Phase Epitaxy) of the Ridge. Adopting a special current blocking structure, called AlGaAs base nPn transistor current block, we obtained a good means of current restriction. Although the threshol current of the Laser diode was ratehr high, 220mA for 180$\mu{m}$ cavity length, we showed a possibility of lowering the threshold current as was demonstrated in the near field pattern characteristics.
Advisors
Kwon, Young-Seresearcher권영세researcher
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
1991
Identifier
67853/325007 / 000891270
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1991.2, [ [iii], 34 p. ]

URI
http://hdl.handle.net/10203/38002
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=67853&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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