Self-aligned emitter-base contact과 base pad isolation을 이용한 초고주파용 InP/InGaAs HBT제작Fabrication of high-frequency InP/InGaAs HBTs using self-aligned emitter-base contact and base pad isolation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 양경훈 | - |
| dc.contributor.advisor | Yang, Kyoung-Hoon | - |
| dc.contributor.author | 송용주 | - |
| dc.contributor.author | Song, Yong-Joo | - |
| dc.date.accessioned | 2011-12-14T01:50:28Z | - |
| dc.date.available | 2011-12-14T01:50:28Z | - |
| dc.date.issued | 2002 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=174116&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/37586 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2002.2, [ 77 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | 베이스-콜렉터 커패시턴스 | - |
| dc.subject | 자기 정렬 전극 | - |
| dc.subject | 이종접합 바이폴라 트랜지스터 | - |
| dc.subject | 베이스 패드 | - |
| dc.subject | base pad isolation | - |
| dc.subject | extrinsic base-collector capacitance | - |
| dc.subject | self-aligned emitter-base contact | - |
| dc.subject | Heterojunction Bipolar Transistors(HBTs) | - |
| dc.title | Self-aligned emitter-base contact과 base pad isolation을 이용한 초고주파용 InP/InGaAs HBT제작 | - |
| dc.title.alternative | Fabrication of high-frequency InP/InGaAs HBTs using self-aligned emitter-base contact and base pad isolation | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 174116/325007 | - |
| dc.description.department | 한국과학기술원 : 전기및전자공학전공, | - |
| dc.identifier.uid | 000993292 | - |
| dc.contributor.localauthor | 양경훈 | - |
| dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
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- EE-Theses_Master(석사논문)
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