(A) study on physical behaviors of the substrate resistance for CMOS RF modelingCMOS RF 모델링을 위한 기판저항의 물리적 특성에 관한 연구
A simple parameter extraction method of substrate resistance is proposed. And physical behaviors of the substrate resistance for CMOS RF modeling such as the drain bias dependency, the effect of the body contact width ans STI (Shallow Trench Isolation) distance are observed. The analyses of simulation results and measurement data are described. And validation is carried out then drawn conclusions.
- Advisors
- Shin, Hyung-Cheolresearcher; 신형철researcher
- Description
- 한국과학기술원 : 전기및전자공학전공,
- Publisher
- 한국과학기술원
- Issue Date
- 2001
- Identifier
- 165556/325007 / 000993031
- Language
- eng
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2001.2, [ ii, 40 p. ]
- Keywords
substrate; modeling; MOSFET; RF; resistance; 물리적 특성; 파라미터; 저항; 기판; 모델링
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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