Quantum dot flash memory using E-Beam lithography and RIE etching = 전자선 묘화와 반응성 이온 식각을 이용한 양자점 플래시 메모리에 대한 연구

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The quantum dot flash memory using E-beam lithography and RIE etching was fabricated and measured. The essential technology for fabricating the quantum dot flash memory which can act as a memory just with single electron by the quantum effect is the nano-size patterning. For this, many improvements such as PR thinning, wafer focusing, and chip size reducing to 200㎛ are suggested. With this, it succeeds in patterning 90nm wide pattern with 300nm thickness. With this improved patterning technology and $Cl_2$ based RIE etching, self-aligned 100nm wide quantum dot and 100nm wide narrow channel which is the most important structure for the quantum dot flash memory were fabricated. With this, the real device was fabricated. Although the single-electron effect didn``t observed at room temperature, the memory operating is observed. The number of electrons which was used for this operation is estimated about 35.
Advisors
Shin, Hyung-Cheolresearcher신형철researcher
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
1999
Identifier
150922/325007 / 000973769
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1999.2, [ vi, 59 p. ]

URI
http://hdl.handle.net/10203/37233
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=150922&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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