저온 공정을 사용한 ECR $N_2O$-플라즈마 산화막을 가지는 다결정 실리콘 박막 트랜지스터 EEPROM 소자 = A polysilicon thin film transistor EEPROM cell with ECR $N_2O-plasma$ oxide using low temperature process

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Advisors
한철희researcherHan, Chul-Hiresearcher
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
1999
Identifier
150880/325007 / 000973408
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1999.2, [ ii, 31 p. ]

Keywords

저온공정; EEPROM; 박막트랜지스터; 다결정실리콘; 플라즈마산화막; Plasma oxide; Low temperature process; EEPROM; TFT; Polysilicon

URI
http://hdl.handle.net/10203/37191
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=150880&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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