Controlling the composition of Ti1–xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition

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dc.contributor.authorLee, Yong Juko
dc.contributor.authorKang, Sang-Wonko
dc.date.accessioned2008-03-05T06:02:53Z-
dc.date.available2008-03-05T06:02:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-08-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.21, no.5, pp.L13 - L15-
dc.identifier.issn0734-2101-
dc.identifier.urihttp://hdl.handle.net/10203/3256-
dc.description.sponsorshipThe authors acknowledge support for this study by the Ministry of Science and Technology of Korea, through the National Research Laboratory Project.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherA V S Amer Inst Physics-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectSPUTTERED TIALN FILMS-
dc.subjectMECHANICAL-PROPERTIES-
dc.subjectTITANIUM NITRIDE-
dc.subjectCOATINGS-
dc.subjectSURFACE-
dc.subjectGROWTH-
dc.titleControlling the composition of Ti1–xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition-
dc.typeArticle-
dc.identifier.wosid000185608100003-
dc.identifier.scopusid2-s2.0-0142027025-
dc.type.rimsART-
dc.citation.volume21-
dc.citation.issue5-
dc.citation.beginningpageL13-
dc.citation.endingpageL15-
dc.citation.publicationnameJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKang, Sang-Won-
dc.contributor.nonIdAuthorLee, Yong Ju-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusSPUTTERED TIALN FILMS-
dc.subject.keywordPlusMECHANICAL-PROPERTIES-
dc.subject.keywordPlusTITANIUM NITRIDE-
dc.subject.keywordPlusCOATINGS-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusGROWTH-
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