Study of Interaction between Incident Silicon and Germanium Fluxes and SiO2 Layer Using Solid-Source Molecular Beam Epitaxy

The dependence on the substrate temperature and the flux rates of the behavior of impinging elemental Si and Ge fluxes on a SiO2 surface. including SiO2 etching and the deposition of polycrystalline Si and SiGe films, was investigated by using the solid source molecular beam epitaxy (MBE). Flux rates of the source beams and a substrate temperature were in the range of 1 to 5 X 10(13) atoms/cm2s and 710-810-degrees-C, respectively. Under these experimental conditions, the Ge flux was not individually effective to etch the SiO2, but contributed to etching the oxide layer with an accompanying Si flux. The critical flux of Si for SiO2 etching at 740-degrees-C was determined to be about 1 X 10(13) atoms/cm2s.
Publisher
A V S Amer Inst Physics
Issue Date
1994-03
Language
ENG
Keywords

CHEMICAL VAPOR-DEPOSITION; DICHLOROSILANE; ALLOYS; GROWTH; GE

Citation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.12, no.2, pp.1167 - 1169

ISSN
1071-1023
DOI
10.1116/1.587075
URI
http://hdl.handle.net/10203/3254
Appears in Collection
MS-Journal Papers(저널논문)
  • Hit : 395
  • Download : 4
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 12 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0