DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yong Ju | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2008-02-22T09:37:17Z | - |
dc.date.available | 2008-02-22T09:37:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-03 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.5, pp.C70 - C72 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3162 | - |
dc.description.abstract | Ti-Al-N thin films were synthesized from tetrakis(dimethylamino) titanium (Ti[N(CH3)(2)](4)), NH3, and trimethylaluminum [TMA, Al-2(CH3)(6)] at a low temperature (180degreesC) using plasma-enhanced atomic layer deposition. A hydrogen plasma was used as a reducing agent for TMA and to improve film quality. One cycle of Ti-Al-N deposition consisted of TiN and Al steps, and the Ti-Al-N cycles were then repeated until the desired thickness was obtained. The growth rate was saturated at 0.35 nm/cycle, which made it easy to control the film thickness precisely. Ti-Al-N films had excellent surface morphology and good step coverage on a patterned structure, which resulted from the self-limiting surface reactions. Ti-Al-N films are polycrystalline with a hexagonal Ti3Al2N2 structure and good oxidation resistance when O-2 annealed at 700degreesC for 30 min. (C) 2003 The Electrochemical Society. | - |
dc.description.sponsorship | We acknowledge the support of this study by the Ministry of Science and Technology of Korea, through the National Research Laboratory Project. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | TITANIUM NITRIDE | - |
dc.subject | SURFACE | - |
dc.subject | CHEMISTRY | - |
dc.subject | GROWTH | - |
dc.title | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN | - |
dc.type | Article | - |
dc.identifier.wosid | 000181766400009 | - |
dc.identifier.scopusid | 2-s2.0-0038035338 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | C70 | - |
dc.citation.endingpage | C72 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Lee, Yong Ju | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | TITANIUM NITRIDE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | CHEMISTRY | - |
dc.subject.keywordPlus | GROWTH | - |
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