Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN

Ti-Al-N thin films were synthesized from tetrakis(dimethylamino) titanium (Ti[N(CH3)(2)](4)), NH3, and trimethylaluminum [TMA, Al-2(CH3)(6)] at a low temperature (180degreesC) using plasma-enhanced atomic layer deposition. A hydrogen plasma was used as a reducing agent for TMA and to improve film quality. One cycle of Ti-Al-N deposition consisted of TiN and Al steps, and the Ti-Al-N cycles were then repeated until the desired thickness was obtained. The growth rate was saturated at 0.35 nm/cycle, which made it easy to control the film thickness precisely. Ti-Al-N films had excellent surface morphology and good step coverage on a patterned structure, which resulted from the self-limiting surface reactions. Ti-Al-N films are polycrystalline with a hexagonal Ti3Al2N2 structure and good oxidation resistance when O-2 annealed at 700degreesC for 30 min. (C) 2003 The Electrochemical Society.
Publisher
Electrochemical Soc Inc
Issue Date
2003-03
Language
ENG
Keywords

CHEMICAL-VAPOR-DEPOSITION; TITANIUM NITRIDE; SURFACE; CHEMISTRY; GROWTH

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.5, pp.C70 - C72

ISSN
1099-0062
URI
http://hdl.handle.net/10203/3162
Appears in Collection
MS-Journal Papers(저널논문)
  • Hit : 406
  • Download : 37
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 4 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0