Physicochemical characterization of plasma enhanced chemical vapor deposited silicon nitride filmPECVD로 증착된 질화규소 박막의 물리 화학적 특성 연구

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This thesis reports studies on the physicochemical properties of the hydrogenated silicon nitride film deposited by plasma enhanced chemical vapor deposition (PECVD) system. The studies include a correlation between physicochemical properties and bond density of a PECVD silicon nitride film, as well as effects of radiation damage during the high energy ion beam irradiation. Silicon nitride films were prepared on Si and GaAs wafers by using parallel plate PECVD reactor. The number of Si and N atoms in the film was measured by Rutherford backscattering. The number of H atoms was determined by an energy recoil detection (ERD) technique. A zero dose extrapolation method was employed in order to eliminate the effect of undesirable decrease in ERD count during the ion beam irradiation. The atomic density was determined by dividing the number of atoms by the film thickness obtained from ellipsometry. Infrared absorption cross sections of the Si-H and N-H bonds were obtained by using a correlation curve between IR band areas and the number of hydrogen atoms from ERD. The density of chemical bonds such as Si-Si, Si-N, Si-H and N-H was obtained by equating the atomic density with the absorption cross section of the bonds. Investigation of the refractive index of films with different chemical structures suggests that a concept of the bond refraction can explain a relatively high refractive index (1.8-2.3) and low density (2.1-2.7 g/㎤) of the Si-rich silicon nitride films, as compared with a stoichiometric compound $Si_3N_4$. Etch rate of the silicon nitride film in buffered oxide etchant solution showed a linear relation against the density of silicon atoms that were not bonded to hydrogen. The PECVD silicon nitride films were prepared with various substrate temperatures. The 2.5$MeV^4He^{++}$ ion was irradiated into the film in a vacuum chamber at room temperature. ERD signal was recorded according to the ion dose to observe the loss of the hydrogen counts induced by t...
Advisors
Ryoo, Ryongresearcher유룡researcher
Description
한국과학기술원 : 화학과,
Publisher
한국과학기술원
Issue Date
1995
Identifier
98582/325007 / 000925288
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 화학과, 1995.2, [ vi, 146 p. ]

URI
http://hdl.handle.net/10203/31412
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=98582&flag=dissertation
Appears in Collection
CH-Theses_Ph.D.(박사논문)
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