DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, JS | ko |
dc.contributor.author | Kang, SW | ko |
dc.date.accessioned | 2008-02-18T06:50:45Z | - |
dc.date.available | 2008-02-18T06:50:45Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.8, pp.C87 - C89 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3064 | - |
dc.description.abstract | Thin films of Ti-Si-N were deposited by plasma-enhanced atomic layer deposition (PEALD) using TiCl4, SiH4, and N-2 /H-2 /Ar radicals at 350degreesC. When the reactants were supplied in the sequence of TiCl4 pulse, SiH4 pulse, then N-2 /H-2 /Ar plasma, the thickness per cycle and Si content in Ti-Si-N thin film saturated at 0.73 Angstrom/cycle and 8.5 atom % (Cl less than or equal to 0.5 atom %), respectively. The thickness per cycle is different from that of metallorganic ALD (MOALD). Although X-ray diffraction did not detect the presence of silicon nitride, the silicon nitride phase was investigated by electron spectroscopy for chemical analysis. The addition of Si in Ti-Si-N thin films results in increased resistivity (approximately 500 muOmega cm) and improved Cu diffusion barrier properties due to the Si3N4 phase. (C) 2004 The Electrochemical Society. | - |
dc.description.sponsorship | Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | ATOMIC-LAYER DEPOSITION | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | DIFFUSION-BARRIERS | - |
dc.subject | CU METALLIZATIONS | - |
dc.subject | THIN-FILMS | - |
dc.subject | SYSTEM | - |
dc.subject | TIN | - |
dc.title | Plasma-enhanced ALD of titanium-silicon-nitride using TiCl4, SiH4, and N-2/H-2/Ar plasma | - |
dc.type | Article | - |
dc.identifier.wosid | 000222931500016 | - |
dc.identifier.scopusid | 2-s2.0-4344613590 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | C87 | - |
dc.citation.endingpage | C89 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.1764413 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, SW | - |
dc.contributor.nonIdAuthor | Park, JS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ATOMIC-LAYER DEPOSITION | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | DIFFUSION-BARRIERS | - |
dc.subject.keywordPlus | CU METALLIZATIONS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordPlus | TIN | - |
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