A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films

The two-step atomic layer deposition of tantalum nitride (TaN) in which the deposition cycle involved two chemical reaction steps, the formation of elemental tantalum (Ta) by reducing tantalum-pentafluoride (TaF5) with hydrogen plasma and the subsequent nitridation of the preformed Ta with NH3, was performed at 350 degrees C. Cubic-TaN with a Ta/N ratio of 1:1 was achieved independently of the nitridation time, and the fluorine content of the films was below the detection limit using Auger electron spectroscopy. As a result, the electrical resistivity of the TaN film was reduced below 500 mu Omega cm by suppressing the formation of Ta3N5. (c) 2006 The Electrochemical Society.
Publisher
Electrochemical Soc Inc
Issue Date
2006-06
Language
ENG
Keywords

DIFFUSION BARRIER; CU METALLIZATION; REDUCING AGENT; TAN; GROWTH; COPPER

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.9, pp.G282 - G284

ISSN
1099-0062
DOI
10.1149/1.2216593
URI
http://hdl.handle.net/10203/3062
Appears in Collection
MS-Journal Papers(저널논문)
  • Hit : 594
  • Download : 55
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 11 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0