Complementary metal oxide semiconductor image sensor and method for fabricating the same

Abstract

Provided are a CMOS image sensor and a method for fabricating the same. The image sensor comprises a light receiving element, and a nanopillar formed at an upper end of the light receiving element. A method for fabricating a CMOS image sensor, the method comprising steps of: inducing a plasma discharge and forming nanodusts in a light receiving region; etching the light receiving region using the nanodusts as a mask; and removing the nanodusts.