Highly stable organic transistor memory using hydroxyl group charge trapping layer

Abstract

Wearable and flexible electronics receive attention for future device. Organic thin film transistor nonvolatile memories (OTFT-NVMs) is important component of wearable electronics. Preciously, for using blocking dielectric layer (BLD) as poly(1,4-butanediol di-acrylate) (pBDDA) and tunneling dielectric layer(TDL) as poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) via an initiated chemical vapor deposition (iCVD) process. pBDDA has great insulating properties, breakdown field (>8 MV) at ultra-low thickness un-der 20nm. However, this bilayer device has low stability of containing electron for operate as memory device. To overcome this problem, introduce charge trapping layer (CT layer) for having an OH functional group as CT layer using 1,4-butanediol diacrylate (BDDA) co-polymer with 2-hydroxyethyl acrylate (HEA) for various condition. All of the fabricated NVMs has 5V window at the proper programming/erasing voltage. The retention, parameter of stability, has as long as $10^8$ s drain current ($I_D$) 1 order decrease. At 1.6% strain device constantly show the memory performance. For flash memory, the OTFT-NVM with CT layer dielectric should become promising technology.