Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

Abstract

We investigate the magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H-2 intercalation. At the charge neutrality point, the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors (v) multiples of four (v = 4, 8, 12), as well as broken valley symmetry QHSs at v = 0 and v = 6. These results unambiguously show that the quasi-free-standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.