A study on the adhesion enhancement of polyetherimide to Si wafer using an Al-chelate treatment during multichip module fabrication

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dc.contributor.authorKo, HSko
dc.contributor.authorChung, ISko
dc.contributor.authorPaik, Kyung-Wookko
dc.date.accessioned2008-01-11T09:06:09Z-
dc.date.available2008-01-11T09:06:09Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-06-
dc.identifier.citationMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , v.83, no.1-3, pp.111 - 118-
dc.identifier.issn0921-5107-
dc.identifier.urihttp://hdl.handle.net/10203/2729-
dc.description.abstractAl-chelate coupling agent was successfully applied to improve the adhesion strength of a thermoplastic polyetherimide resin, Ultem 1000 (R) to a silicon wafer during the fabrication of multichip module (MCM) substrates, The origin of the enhanced adhesion strength achieved by applying Al chelate was also investigated using a surface characterization experiment and a theoretical approach. The peel strength of as-laminated Ultem film on an untreated Si wafer was the same as that on a coupler-treated one right after lamination. However, the Ultem layer laminated on an untreated Si wafer lost its adhesion strength to zero within 24 h of 85 degrees /85% relative humidity (RH) aging. In contrast, the Ultem film laminated on the coupler-treated Si wafer maintained its adhesion strength even after 30 days of 85 degreesC/85% RH treatment. Atomic force microscopy (AFM), surface energy calculation using contact angle measurement, and high-resolution X-ray photoelectron spectroscopy (XPS) analysis were conducted to characterize the surface conditions of a bare Si wafer and a coupler-treated Si wafer. It was revealed by the AFM experiment that the surface roughening caused by Al-chelate treatment was negligible, meaning that the enhanced adhesion stability during 85 degreesC/85% RH aging is mainly attributed to the surface characteristic change of Si substrate. Based on the results of XPS analysis and contact angle measurement, a model of surface bonding structure of an Al-chelate treated Si wafer was suggested and compared with that of a bare Si wafer. Finally, peel strength variation of Si wafers with and without the coupling agent as a function of 85 degreesC/85% RH aging times can be explained by the zero point of charge consideration. Stable lamination based MCMs and micro-via build-up processes can also be obtained using these results. (C) 2001 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherElsevier BV-
dc.subjectPOLYIMIDE ADHESION-
dc.subjectSURFACE-
dc.subjectSILICA-
dc.subjectCOATINGS-
dc.subjectXPS-
dc.titleA study on the adhesion enhancement of polyetherimide to Si wafer using an Al-chelate treatment during multichip module fabrication-
dc.typeArticle-
dc.identifier.wosid000169321500020-
dc.identifier.scopusid2-s2.0-0035927990-
dc.type.rimsART-
dc.citation.volume83-
dc.citation.issue1-3-
dc.citation.beginningpage111-
dc.citation.endingpage118-
dc.citation.publicationnameMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorPaik, Kyung-Wook-
dc.contributor.nonIdAuthorKo, HS-
dc.contributor.nonIdAuthorChung, IS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoradhesion promoter-
dc.subject.keywordAuthorAl chelate-
dc.subject.keywordAuthorUltem-
dc.subject.keywordAuthorpolyetherimide-
dc.subject.keywordAuthorzero point of charge-
dc.subject.keywordAuthormultichip module-
dc.subject.keywordPlusPOLYIMIDE ADHESION-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusSILICA-
dc.subject.keywordPlusCOATINGS-
dc.subject.keywordPlusXPS-
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