High device performance of ion-implanted WN 0.25 mu m gate MESFET fabricated using I-line photolithography with application to MMIC

Abstract

We developed the WN 0.25 mu m gate GaAs MESFET fabrication process using direct ion-implantation and i-line photolithography. DC current-voltage characteristics does not show short channel effect. The maximum transconductance of 600mS/mm and the K-factor of 450mS/Vmm were obtained. As high as 65GHz of cut-off frequency has been realized without any de-embedding of parasitic effects. The MESFET shows the minimum noise figure of 0.87dB and the associated gain of 9.97dB at 12GHz.