0.20 mu m pseudomorphic HEMT device fabricated by PSM and self-aligned head T-shaped gate techniques

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dc.contributor.authorPark, Byung-Sunko
dc.contributor.authorLee, Jin-Heeko
dc.contributor.authorYoon, Hyung-Supko
dc.contributor.authorPark, Chul Soonko
dc.contributor.authorPyun, Kwang-Euiko
dc.contributor.authorKim, Il-Kwangko
dc.date.accessioned2020-01-09T02:20:15Z-
dc.date.available2020-01-09T02:20:15Z-
dc.date.created2020-01-06-
dc.date.issued1997-06-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S140 - S142-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/270994-
dc.description.abstractWe propose a new optical lithographic technique to form 0.20 mu m length T-shaped gate for application to low noise high electron mobility transistor (HEMT). By using this technique, 0.20 mu m AlGaAs/InGaAs/GaAs pseudomorphic HEMT (PHEMT) was successfully fabricated. and the transconductance of 498 mS/mm and the cutoff frequency of 62.4 GHz were obtained, which are the best values ever reported for the HEMTs fabricated using optical lithography.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.title0.20 mu m pseudomorphic HEMT device fabricated by PSM and self-aligned head T-shaped gate techniques-
dc.typeArticle-
dc.identifier.wosidA1997XJ37500028-
dc.identifier.scopusid2-s2.0-0031480853-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.beginningpageS140-
dc.citation.endingpageS142-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorPark, Chul Soon-
dc.contributor.nonIdAuthorPark, Byung-Sun-
dc.contributor.nonIdAuthorLee, Jin-Hee-
dc.contributor.nonIdAuthorYoon, Hyung-Sup-
dc.contributor.nonIdAuthorPyun, Kwang-Eui-
dc.contributor.nonIdAuthorKim, Il-Kwang-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusPHASE-SHIFTING MASK-
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