Exploiting data longevity for enhancing the lifetime of flash-based storage class memory

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This paper proposes to exploit the capability of retention time relaxation in flash memories for improving the lifetime of an SLCbased SSD. The main idea is that as a majority of I/O data in a typical workload do not need a retention time larger than a few days, we can have multiple partial program states in a cell and use every two states to store one-bit data at each time. Thus, we can store multiple bits in a cell (one bit at each time) without erasing it after each write -That would directly translates into lifetime enhancement. The proposed scheme is called Dense-SLC (D-SLC) flash design which improves SSD lifetime by 5.1×-8.6×.
Publisher
ACM Special Interest Group on Performance Evaluation (SIGMETRICS)
Issue Date
2017-06-05
Language
English
Citation

2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, SIGMETRICS 2017, pp.53

DOI
10.1145/3078505.3078527
URI
http://hdl.handle.net/10203/269616
Appears in Collection
EE-Conference Papers(학술회의논문)
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