Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs

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dc.contributor.authorLim, Hyeong-Rakko
dc.contributor.authorKim, Seongkwangko
dc.contributor.authorHan, Jae-Hoonko
dc.contributor.authorKim, Hansungko
dc.contributor.authorGeum, Dae-Myeongko
dc.contributor.authorLee, Yun-Joongko
dc.contributor.authorJu, Byeong-Kwonko
dc.contributor.authorKim, Hyung-Junko
dc.contributor.authorKim, Sanghyeonko
dc.date.accessioned2019-09-17T06:20:43Z-
dc.date.available2019-09-17T06:20:43Z-
dc.date.created2019-09-17-
dc.date.issued2019-09-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1362 - 1365-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/267506-
dc.description.abstractIn this letter, we have fabricated Ge-on-insulator (Ge-OI) junctionless (JL) n-MOSFETs via wafer bonding and epitaxial lift-off (ELO) techniques. We have evaluated the electrical characteristics of Ge-OI JL n-MOSFETs with different thickness of Ge channel carefully thinned by the digital etching. Furthermore, the impact of bottom-gate biasing on the Ge-OI JL n-MOSFET devices with different Ge channel thicknesses has been demonstrated. High effective electron mobility (mu(eff)) of 160 cm(2)/V.s was obtained from a Ge-OI JL n-MOSFET with an 18 nm-thick Ge channel and subthreshold slope (S.S.) of 230 mV/dec was extracted on an even thinner 10-nm-thick Ge-OI JL n-MOSFET. Also, due to the stronger coupling between the channel and bottom-gate, we demonstrated higher Vth tunability and improvement of mu(eff) by bottom-gate biasing.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleImpact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs-
dc.typeArticle-
dc.identifier.wosid000483014600005-
dc.type.rimsART-
dc.citation.volume40-
dc.citation.issue9-
dc.citation.beginningpage1362-
dc.citation.endingpage1365-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2019.2931410-
dc.contributor.localauthorKim, Sanghyeon-
dc.contributor.nonIdAuthorLim, Hyeong-Rak-
dc.contributor.nonIdAuthorHan, Jae-Hoon-
dc.contributor.nonIdAuthorKim, Hansung-
dc.contributor.nonIdAuthorGeum, Dae-Myeong-
dc.contributor.nonIdAuthorLee, Yun-Joong-
dc.contributor.nonIdAuthorJu, Byeong-Kwon-
dc.contributor.nonIdAuthorKim, Hyung-Jun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorGe MOSFETs-
dc.subject.keywordAuthorGe-OI-
dc.subject.keywordAuthorGe-on-Insulator-
dc.subject.keywordAuthorjunctionless MOSFETs-
dc.subject.keywordAuthorwafer bonding-
dc.subject.keywordAuthorepitaxial lift-off-
dc.subject.keywordPlusMOBILITY-
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