An ab initio study of the ferroelectric In2Se3/graphene heterostructure

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Using ab initio calculations, we have investigated the electronic structure properties of the ferroelectric alpha-In2Se3/graphene heterostructure. The presence of an intrinsic polarization in In2Se3 shifts the Dirac point of graphene above the Fermi level, resulting in a p-type doping, the degree of doping being dependent on the direction of the dipole with respect to the graphene layer. Also, we found that an external electric field can be used to control not only the degree of doping but also the type of Schottky contact, as n-type, p-type or Ohmic.
Publisher
ELSEVIER
Issue Date
2019-10
Language
English
Article Type
Article
Citation

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.114

ISSN
1386-9477
DOI
10.1016/j.physe.2019.113582
URI
http://hdl.handle.net/10203/267500
Appears in Collection
RIMS Journal Papers
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