(A) study of phonon-limited quantum transport of silicon nanowire FETs = 포논-전자 상호작용을 반영한 실리콘 나노와이어 트랜지스터의 양자 수송에 대한 연구

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As the feature size of the metal-oxide-semiconductor field effect transistors (MOSFETs) decreases to the nanoscale, various quantum mechanical phenomena, such as geometrical confinement and tunneling, become dominant in determining the performances of the MOSFETs. In addition to these quantum effects, the phonon scattering effect is one of the dominant factors governing the device performance. Hence, it is important to perform the device simulation considering these effects. In this thesis, the tools that facilitate the full quantum transport simulation including phonon scattering with affordable computational cost have been developed. We focus on the practical device simulation with realistic device size. The kp method is applied to calculate the Hamiltonian using the finite element method. The mode space method is used to reduce the computational burden related to the phonon scattering. Using the tools, the phonon scattering effects on the circular nanowire MOSFETs have been investigated. The geometry effects of the cross section have been studied. We suggest the best design configuration that minimizes the variation of the device performances by the imperfection of the fabrication process. In addition, the design guidelines to improve the device performances are suggested.
Advisors
Shin, Mincheolresearcher신민철researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2019
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2019.2,[v, 55 p. :]

Keywords

MOSFET▼ananowire▼akp method▼afinite element method▼aphonon scattering effect▼anonequilibrium Green's function; 금속 산화물 반도체 전계 효과 트랜지스터▼a나노와이어▼akp 방법▼a유한요소법▼a포논 산란 효과▼a비평형 그린 함수

URI
http://hdl.handle.net/10203/266820
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=843421&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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