Thin film transistors by edge contact between single walled carbon nanotubes and graphene = 단일벽 탄소나노튜브와 그래핀 간의 측면 접촉에 의한 박막 트랜지스터 연구

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 5
  • Download : 0
Single-walled carbon nanotubes have been studied as channel regions of thin film transistors due to their excellent electrical properties such as variable electron bandgap, high mobility, and high-speed charge transport. However, electrical performance and applications were limited by the contact resistance in the contact area between the metal electrode and the single-walled carbon nanotube channel. Therefore, in this study, we tried to reduce the contact resistance through two methods. The first was changed to the edge contact structure which contacted with side-to-side from the top contact structure which contacted with up-down. The contact length can be close to zero because the contact between the channel and the electrode made as a dot. At this time, the single-walled carbon nanotubes were encapsulated by hexagonal boron nitride to further increase the output current. The second is the contact between carbon nanotubes and graphene, which are homogeneous carbon-based materials, rather than the contact between common metal materials and carbon nanotubes. The graphene electrode showed ohmic contact characteristics in which the output current changes linearly according to the drain voltage, unlike the gold electrode having the Schottky contact property. The graphene electrode also showed an excellent current level of about $30 \muA$ at 1 V drain voltage. In conclusion, this study first formed edge contact between the carbon nanotube channels and the graphene electrodes, showing significant insights into the edge contact between carbon-based materials.
Advisors
Jeon, Seokwooresearcher전석우researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2019
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 2019.2,[iv, 45 p. :]

Keywords

Carbon nanotube▼agraphene▼aboron nitride▼acontact resistance▼aedge contact; 탄소나노튜브▼a그래핀▼a질화 붕소▼a접촉 저항▼a측면 접촉

URI
http://hdl.handle.net/10203/266505
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=843290&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0